doping density

The doping dependency of the checkerboard pattern offers strong evidence of a charge-density wave, Hudson said.

掺杂水平和“棋盘”图样的相关性是对电荷密度波的有力证据.哈德森如是说.

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Doping can excite a charge density wave weakening the spin density wave against the stability of the ferromagnetic state.

掺杂能激发电荷密度波，从而削弱了自旋密度波，最终不利于铁磁态的稳定。

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Also, the improvement of quantum dot lasers' performance is investigated through vertical stacking and p-type doping and the optimal dot density, which corresponds to minimal threshold current density, is calculated.

研究了垂直层叠和p型掺杂对量子点激光器性能的改善，并讨论了获得极小阈值电流密度时的最佳量子点密度。

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Influence of Doping Density on Hot-carrier-effect in Grooved Gate PMOSFET

杂质浓度对槽栅PMOSFET抗热载流子特性的影响

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The effect of different doping density and different testing temperature on the impedance spectrum is studied based on the simulation equivalent circuit within the electrolytic film of CeO2 base.

根据CeO2基电解质薄膜的内部模拟等效电路，研究了不同掺杂浓度及不同测试温度对阻抗谱的影响。

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For the grooved gate PMOSFET, the study results prove that with the increase of channel doping density, the threshold voltage increases, the drain current driving ability decreases, and the hot carrier effect is suppressed, as in the planar device.

研究发现，随着沟道掺杂浓度的提高，与平面器件相同，槽栅器件的阈值电压提高，漏极驱动能力降低，抗热载流子效应增强；

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The results show that they are different from the conventional PTCR ceramic materials in the following aspects: The effect of Sb doping density on resistance temperature characteristics of the ceramics materials is high;

结果表明：微量元素Sb的掺杂量对线性电阻温度特性影响较大；

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The research results indicate that with the increase of doping density in channel, the hot carrier effect immunity becomes better.

研究发现，随着沟道杂质浓度的提高，器件的抗热载流子能力增强；

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The experimental results show that pulse width decreases with the increasing of quartz powder doping density and liquid depth.

实验结果表明，产生KrF短脉冲的宽度随酒精中掺杂石英粉末浓度、酒精悬浊液厚度、增加而减小。

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The doping concentration in the active region has great effect on the waveguide property. With the increasing of doping concentration, the waveguide loss, threshold gain and current density of THz QCL increase, the confinement factor decrease. 3.

结果表明，随着有源区掺杂浓度的提高，波导损耗增加，阈值电流增加，波导限制因子降低。

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It also manifests that the degradation is different for the device with different channel doping density.

沟道杂质浓度不同,界面态引起的器件特性的退化则不同.

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